InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes.

Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, detailed mechanisms of how the InGaN EC contributes to the efficiency improvement have remained unclear so far. In this work, we theoretically propose and experimentally demonst...

Controlling electron overflow in phosphor-free InGaN/GaN nanowire white light-emitting diodes.

We have investigated for the first time the impact of electron overflow on the performance of nanowire light-emitting diodes (LEDs) operating in the entire visible spectral range, wherein intrinsic white light emission is achieved from self-organized InGaN quantum dots embedded in defect-free GaN nanowires on a single chip. Through detailed temperature-dependent electroluminescence and simulati...

GaN microdisk light emitting diodes

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Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes

Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering

To enhance lasers’ power and improve their performance, a model wasapplied for the waveguide design of 400 nm InGaN/InGaN semiconductor laser, whichis much easier to implement. The conventional and new laser structures weretheoretically investigated using simulation software PICS3D, which self-consistentlycombines 3D simulation of carrier transport, self-heating, and opt...